CSD85312Q3E
Part Number:
CSD85312Q3E
Manufacturer:
TI
Description:
MOSFET 2N-CH 20V 39A 8VSON
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
52227 Pieces
Delivery Time:
1-2 days
Data sheet:
CSD85312Q3E.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:1.4V @ 250µA
Supplier Device Package:8-VSON (3.3x3.3)
Series:NexFET™
Rds On (Max) @ Id, Vgs:12.4 mOhm @ 10A, 8V
Power - Max:2.5W
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:296-37187-2
CSD85312Q3E-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:35 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:15.2nC @ 4.5V
FET Type:2 N-Channel (Dual) Common Source
FET Feature:Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):20V
Detailed Description:Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:39A
Email:[email protected]

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