SI1025X-T1-GE3
SI1025X-T1-GE3
型號:
SI1025X-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2P-CH 60V 0.19A SC-89
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
27088 Pieces
發貨時間:
1-2 days
數據表:
SI1025X-T1-GE3.pdf

簡單介紹

We can supply SI1025X-T1-GE3, use the request quote form to request SI1025X-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1025X-T1-GE3.The price and lead time for SI1025X-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1025X-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:3V @ 250µA
供應商設備封裝:SC-89-6
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:4 Ohm @ 500mA, 10V
功率 - 最大:250mW
封装:Tape & Reel (TR)
封裝/箱體:SOT-563, SOT-666
其他名稱:SI1025X-T1-GE3TR
SI1025XT1GE3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:33 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:23pF @ 25V
柵極電荷(Qg)(Max)@ Vgs:1.7nC @ 15V
FET型:2 P-Channel (Dual)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):60V
詳細說明:Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89-6
電流 - 25°C連續排水(Id):190mA
基礎部件號:SI1025
Email:[email protected]

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