TPCF8B01(TE85L,F,M
TPCF8B01(TE85L,F,M
Part Number:
TPCF8B01(TE85L,F,M
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 20V 2.7A VS-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16091 Pieces
Delivery Time:
1-2 days
Data sheet:
1.TPCF8B01(TE85L,F,M.pdf2.TPCF8B01(TE85L,F,M.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:1.2V @ 200µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:VS-8 (2.9x1.5)
Series:U-MOSIII
Rds On (Max) @ Id, Vgs:110 mOhm @ 1.4A, 4.5V
Power Dissipation (Max):330mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:TPCF8B01(TE85L,F)
TPCF8B01(TE85L,F)-ND
TPCF8B01(TE85L,F,M-ND
TPCF8B01(TE85LFMTR
TPCF8B01FTR
TPCF8B01FTR-ND
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 5V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5)
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Email:[email protected]

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