TPN14006NH,L1Q
TPN14006NH,L1Q
型號:
TPN14006NH,L1Q
製造商:
Toshiba Semiconductor and Storage
描述:
MOSFET N CH 60V 13A 8TSON-ADV
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
61521 Pieces
發貨時間:
1-2 days
數據表:
TPN14006NH,L1Q.pdf

簡單介紹

We can supply TPN14006NH,L1Q, use the request quote form to request TPN14006NH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPN14006NH,L1Q.The price and lead time for TPN14006NH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPN14006NH,L1Q.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 200µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:8-TSON Advance (3.3x3.3)
系列:U-MOSVIII-H
RDS(ON)(最大值)@標識,柵極電壓:14 mOhm @ 6.5A, 10V
功率耗散(最大):700mW (Ta), 30W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:8-PowerVDFN
其他名稱:TPN14006NH,L1Q(M
TPN14006NHL1Q
TPN14006NHL1QTR
工作溫度:150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1300pF @ 30V
柵極電荷(Qg)(Max)@ Vgs:15nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):6.5V, 10V
漏極至源極電壓(Vdss):60V
詳細說明:N-Channel 60V 13A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
電流 - 25°C連續排水(Id):13A (Ta)
Email:[email protected]

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