SQS481ENW-T1_GE3
SQS481ENW-T1_GE3
型號:
SQS481ENW-T1_GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET P-CH 150V 4.7A 1212-8
庫存數量:
20484 Pieces
發貨時間:
1-2 days
數據表:
SQS481ENW-T1_GE3.pdf

簡單介紹

We can supply SQS481ENW-T1_GE3, use the request quote form to request SQS481ENW-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQS481ENW-T1_GE3.The price and lead time for SQS481ENW-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQS481ENW-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:3.5V @ 250µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:PowerPAK® 1212-8
系列:Automotive, AEC-Q101, TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:1.095 Ohm @ 5A, 10V
功率耗散(最大):62.5W (Tc)
封装:Tape & Reel (TR)
封裝/箱體:PowerPAK® 1212-8
其他名稱:SQS481ENW-T1_GE3TR
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
輸入電容(Ciss)(Max)@ Vds:385pF @ 75V
柵極電荷(Qg)(Max)@ Vgs:11nC @ 10V
FET型:P-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):150V
詳細說明:P-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
電流 - 25°C連續排水(Id):4.7A (Tc)
Email:[email protected]

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