SQS481ENW-T1_GE3
SQS481ENW-T1_GE3
Nomor bagian:
SQS481ENW-T1_GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET P-CH 150V 4.7A 1212-8
Kuantitas yang Tersedia:
20484 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SQS481ENW-T1_GE3.pdf

pengantar

We can supply SQS481ENW-T1_GE3, use the request quote form to request SQS481ENW-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQS481ENW-T1_GE3.The price and lead time for SQS481ENW-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQS481ENW-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® 1212-8
Seri:Automotive, AEC-Q101, TrenchFET®
Rds Pada (Max) @ Id, Vgs:1.095 Ohm @ 5A, 10V
Power Disipasi (Max):62.5W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® 1212-8
Nama lain:SQS481ENW-T1_GE3TR
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Kapasitansi Masukan (Ciss) (Max) @ VDS:385pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
FET Jenis:P-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):150V
Detil Deskripsi:P-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25 ° C:4.7A (Tc)
Email:[email protected]

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