SQJQ900E-T1_GE3
SQJQ900E-T1_GE3
型號:
SQJQ900E-T1_GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2 N-CH 40V POWERPAK8X8
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
44148 Pieces
發貨時間:
1-2 days
數據表:
SQJQ900E-T1_GE3.pdf

簡單介紹

We can supply SQJQ900E-T1_GE3, use the request quote form to request SQJQ900E-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJQ900E-T1_GE3.The price and lead time for SQJQ900E-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJQ900E-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:2.5V @ 250µA
供應商設備封裝:PowerPAK® 8 x 8 Dual
系列:Automotive, AEC-Q101, TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:3.9 mOhm @ 20A, 10V
功率 - 最大:75W
封装:Tape & Reel (TR)
封裝/箱體:PowerPAK® 8 x 8 Dual
其他名稱:SQJQ900E-T1_GE3TR
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:5900pF @ 20V
柵極電荷(Qg)(Max)@ Vgs:120nC @ 10V
FET型:2 N-Channel (Dual)
FET特點:Standard
漏極至源極電壓(Vdss):40V
詳細說明:Mosfet Array 2 N-Channel (Dual) 40V 100A (Tc) 75W Surface Mount PowerPAK® 8 x 8 Dual
電流 - 25°C連續排水(Id):100A (Tc)
Email:[email protected]

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