SQJB68EP-T1_GE3
SQJB68EP-T1_GE3
型號:
SQJB68EP-T1_GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2 N-CH 100V POWERPAK SO8
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
10631 Pieces
發貨時間:
1-2 days
數據表:
SQJB68EP-T1_GE3.pdf

簡單介紹

We can supply SQJB68EP-T1_GE3, use the request quote form to request SQJB68EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJB68EP-T1_GE3.The price and lead time for SQJB68EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJB68EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:2.5V @ 250µA
供應商設備封裝:PowerPAK® SO-8 Dual
系列:Automotive, AEC-Q101, TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:92 mOhm @ 4A, 10V
功率 - 最大:27W
封装:Tape & Reel (TR)
封裝/箱體:8-PowerTDFN
其他名稱:SQJB68EP-T1_GE3TR
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:280pF @ 25V
柵極電荷(Qg)(Max)@ Vgs:8nC @ 10V
FET型:2 N-Channel (Dual)
FET特點:Standard
漏極至源極電壓(Vdss):100V
詳細說明:Mosfet Array 2 N-Channel (Dual) 100V 11A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual
電流 - 25°C連續排水(Id):11A (Tc)
Email:[email protected]

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