SIHD6N65ET5-GE3
- 型號:
- SIHD6N65ET5-GE3
- 描述:
- MOSFET N-CH 650V 7A TO252AA
- 庫存數量:
- 56663 Pieces
- 發貨時間:
- 1-2 days
簡單介紹
We can supply SIHD6N65ET5-GE3, use the request quote form to request SIHD6N65ET5-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD6N65ET5-GE3.The price and lead time for SIHD6N65ET5-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD6N65ET5-GE3.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 狀況 | New & Unused, Original Packing |
|---|---|
| 來源 | Contact us |
| VGS（TH）（最大）@標識: | 4V @ 250µA |
| Vgs（最大）: | ±30V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-252AA |
| 系列: | E |
| RDS（ON）（最大值）@標識，柵極電壓: | 600 mOhm @ 3A, 10V |
| 功率耗散（最大）: | 78W (Tc) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 輸入電容（Ciss）（Max）@ Vds: | 820pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 48nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 650V |
| 詳細說明: | N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount TO-252AA |
| 電流 - 25°C連續排水（Id）: | 7A (Tc) |
| Email: | [email protected] |
