SIHD6N65ET5-GE3
SIHD6N65ET5-GE3
Part Number:
SIHD6N65ET5-GE3
Výrobce:
Electro-Films (EFI) / Vishay
Popis:
MOSFET N-CH 650V 7A TO252AA
dostupné množství:
56663 Pieces
Čas doručení:
1-2 days
Datový list:
SIHD6N65ET5-GE3.pdf

Úvod

We can supply SIHD6N65ET5-GE3, use the request quote form to request SIHD6N65ET5-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD6N65ET5-GE3.The price and lead time for SIHD6N65ET5-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD6N65ET5-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 250µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-252AA
Série:E
RDS On (Max) @ Id, Vgs:600 mOhm @ 3A, 10V
Ztráta energie (Max):78W (Tc)
Paket / krabice:TO-252-3, DPak (2 Leads + Tab), SC-63
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Vstupní kapacita (Ciss) (Max) @ Vds:820pF @ 100V
Nabíjení brány (Qg) (Max) @ Vgs:48nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):650V
Detailní popis:N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount TO-252AA
Proud - kontinuální odtok (Id) @ 25 ° C:7A (Tc)
Email:[email protected]

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