SIHD12N50E-GE3
SIHD12N50E-GE3
型號:
SIHD12N50E-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CHAN 500V DPAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
60460 Pieces
發貨時間:
1-2 days
數據表:
SIHD12N50E-GE3.pdf

簡單介紹

We can supply SIHD12N50E-GE3, use the request quote form to request SIHD12N50E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD12N50E-GE3.The price and lead time for SIHD12N50E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD12N50E-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:D-PAK (TO-252AA)
系列:E
RDS(ON)(最大值)@標識,柵極電壓:380 mOhm @ 6A, 10V
功率耗散(最大):114W (Tc)
封装:Tube
封裝/箱體:TO-252-3, DPak (2 Leads + Tab), SC-63
其他名稱:SIHD12N50E-GE3CT
SIHD12N50E-GE3CT-ND
工作溫度:-55°C ~ 150°C (TA)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:886pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:50nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):550V
詳細說明:N-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-PAK (TO-252AA)
電流 - 25°C連續排水(Id):10.5A (Tc)
Email:[email protected]

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