SIHB8N50D-GE3
SIHB8N50D-GE3
型號:
SIHB8N50D-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 500V 8.7A D2PAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
48673 Pieces
發貨時間:
1-2 days
數據表:
SIHB8N50D-GE3.pdf

簡單介紹

We can supply SIHB8N50D-GE3, use the request quote form to request SIHB8N50D-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB8N50D-GE3.The price and lead time for SIHB8N50D-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB8N50D-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:5V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-263 (D²Pak)
系列:-
RDS(ON)(最大值)@標識,柵極電壓:850 mOhm @ 4A, 10V
功率耗散(最大):156W (Tc)
封装:Tube
封裝/箱體:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:18 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:527pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:30nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):500V
詳細說明:N-Channel 500V 8.7A (Tc) 156W (Tc) Surface Mount TO-263 (D²Pak)
電流 - 25°C連續排水(Id):8.7A (Tc)
Email:[email protected]

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