NDDL01N60Z-1G
NDDL01N60Z-1G
型號:
NDDL01N60Z-1G
製造商:
AMI Semiconductor / ON Semiconductor
描述:
MOSFET N-CH 600V 0.8A IPAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
22193 Pieces
發貨時間:
1-2 days
數據表:
NDDL01N60Z-1G.pdf

簡單介紹

We can supply NDDL01N60Z-1G, use the request quote form to request NDDL01N60Z-1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NDDL01N60Z-1G.The price and lead time for NDDL01N60Z-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NDDL01N60Z-1G.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4.5V @ 50µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:IPAK (TO-251)
系列:-
RDS(ON)(最大值)@標識,柵極電壓:15 Ohm @ 400mA, 10V
功率耗散(最大):26W (Tc)
封装:Tube
封裝/箱體:TO-251-3 Short Leads, IPak, TO-251AA
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):3 (168 Hours)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:92pF @ 25V
柵極電荷(Qg)(Max)@ Vgs:4.9nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):600V
詳細說明:N-Channel 600V 800mA (Ta) 26W (Tc) Through Hole IPAK (TO-251)
電流 - 25°C連續排水(Id):800mA (Ta)
Email:[email protected]

快速詢價

型號
數量
公司
邮箱
電話
要求