NDD60N360U1-1G
NDD60N360U1-1G
型號:
NDD60N360U1-1G
製造商:
AMI Semiconductor / ON Semiconductor
描述:
MOSFET N-CH 600V 114A IPAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
58050 Pieces
發貨時間:
1-2 days
數據表:
NDD60N360U1-1G.pdf

簡單介紹

We can supply NDD60N360U1-1G, use the request quote form to request NDD60N360U1-1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NDD60N360U1-1G.The price and lead time for NDD60N360U1-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NDD60N360U1-1G.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±25V
技術:MOSFET (Metal Oxide)
供應商設備封裝:I-PAK
系列:-
RDS(ON)(最大值)@標識,柵極電壓:360 mOhm @ 5.5A, 10V
功率耗散(最大):114W (Tc)
封装:Tube
封裝/箱體:TO-251-3 Short Leads, IPak, TO-251AA
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:790pF @ 50V
柵極電荷(Qg)(Max)@ Vgs:26nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):600V
詳細說明:N-Channel 600V 11A (Tc) 114W (Tc) Through Hole I-PAK
電流 - 25°C連續排水(Id):11A (Tc)
Email:[email protected]

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