SI1029X-T1-GE3
SI1029X-T1-GE3
Artikelnummer:
SI1029X-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N/P-CH 60V SC89-6
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
67618 Pieces
Leveranstid:
1-2 days
Datablad:
SI1029X-T1-GE3.pdf

Introduktion

We can supply SI1029X-T1-GE3, use the request quote form to request SI1029X-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1029X-T1-GE3.The price and lead time for SI1029X-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1029X-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Leverantörs Device Package:SC-89-6
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 500mA, 10V
Effekt - Max:250mW
Förpackning:Cut Tape (CT)
Förpackning / Fodral:SOT-563, SOT-666
Andra namn:SI1029X-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:33 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:30pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:0.75nC @ 4.5V
FET-typ:N and P-Channel
FET-funktionen:Logic Level Gate
Avlopp till källspänning (Vdss):60V
detaljerad beskrivning:Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:305mA, 190mA
Bas-delenummer:SI1029
Email:[email protected]

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