RF4E080BNTR
RF4E080BNTR
Artikelnummer:
RF4E080BNTR
Tillverkare:
LAPIS Semiconductor
Beskrivning:
MOSFET N-CH 30V 8A 8-HUML
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
62898 Pieces
Leveranstid:
1-2 days
Datablad:
1.RF4E080BNTR.pdf2.RF4E080BNTR.pdf

Introduktion

We can supply RF4E080BNTR, use the request quote form to request RF4E080BNTR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RF4E080BNTR.The price and lead time for RF4E080BNTR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RF4E080BNTR.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:HUML2020L8
Serier:-
Rds On (Max) @ Id, Vgs:17.6 mOhm @ 8A, 10V
Effektdissipation (Max):2W (Ta)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:8-PowerUDFN
Andra namn:RF4E080BNTRCT
Driftstemperatur:150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:40 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:660pF @ 15V
Gate Laddning (Qg) (Max) @ Vgs:14.5nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):30V
detaljerad beskrivning:N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:8A (Ta)
Email:[email protected]

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