FDI045N10A
Artikelnummer:
FDI045N10A
Tillverkare:
AMI Semiconductor / ON Semiconductor
Beskrivning:
MOSFET N-CH 100V 120A I2PAK-3
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
42749 Pieces
Leveranstid:
1-2 days
Datablad:
FDI045N10A.pdf

Introduktion

We can supply FDI045N10A, use the request quote form to request FDI045N10A pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDI045N10A.The price and lead time for FDI045N10A depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDI045N10A.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:I2PAK (TO-262)
Serier:PowerTrench®
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 100A, 10V
Effektdissipation (Max):263W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:5270pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:74nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:120A (Tc)
Email:[email protected]

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