HUF76629D3ST
Artikelnummer:
HUF76629D3ST
Tillverkare:
AMI Semiconductor / ON Semiconductor
Beskrivning:
MOSFET N-CH 100V 20A DPAK
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
43881 Pieces
Leveranstid:
1-2 days
Datablad:
HUF76629D3ST.pdf

Introduktion

We can supply HUF76629D3ST, use the request quote form to request HUF76629D3ST pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUF76629D3ST.The price and lead time for HUF76629D3ST depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUF76629D3ST.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-252AA
Serier:UltraFET™
Rds On (Max) @ Id, Vgs:52 mOhm @ 20A, 10V
Effektdissipation (Max):110W (Tc)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:TO-252-3, DPak (2 Leads + Tab), SC-63
Andra namn:HUF76629D3STCT
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:8 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1285pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:46nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:N-Channel 100V 20A (Tc) 110W (Tc) Surface Mount TO-252AA
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:20A (Tc)
Email:[email protected]

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