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Dom > Produkty > Dyskretne produkty półprzewodnikowe > Tranzystory - tranzystory polowe, tranzystory polo > TK4R4P06PL,RQ
TK4R4P06PL,RQ
TK4R4P06PL,RQ
Part Number:
TK4R4P06PL,RQ
Producent:
Toshiba Semiconductor and Storage
Opis:
MOSFET N-CHANNEL 60V 58A DPAK
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
33921 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
TK4R4P06PL,RQ.pdf
Zapytanie ofertowe

Wprowadzenie

We can supply TK4R4P06PL,RQ, use the request quote form to request TK4R4P06PL,RQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK4R4P06PL,RQ.The price and lead time for TK4R4P06PL,RQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK4R4P06PL,RQ.We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
VGS (th) (Max) @ Id:2.5V @ 500µA
Vgs (maks.):±20V
Technologia:MOSFET (Metal Oxide)
Dostawca urządzeń Pakiet:DPAK
Seria:U-MOSIX-H
RDS (Max) @ ID, Vgs:4.4 mOhm @ 29A, 10V
Strata mocy (max):87W (Tc)
Opakowania:Cut Tape (CT)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Inne nazwy:TK4R4P06PLRQCT
temperatura robocza:175°C
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
Pojemność wejściowa (Ciss) (maks.) @ Vds:3280pF @ 30V
Opłata bramkowa (Qg) (maksymalna) @ Vgs:48.2nC @ 10V
Rodzaj FET:N-Channel
Cecha FET:-
Napięcie Napędu (Max Rds On, Min Rds On):4.5V, 10V
Spust do źródła napięcia (Vdss):60V
szczegółowy opis:N-Channel 60V 58A (Tc) 87W (Tc) Surface Mount DPAK
Prąd - Ciągły Odpływ (Id) @ 25 ° C:58A (Tc)
Email:[email protected]

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