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Dom > Produkty > Dyskretne produkty półprzewodnikowe > Tranzystory - tranzystory polowe, tranzystory polo > TK4P60DB(T6RSS-Q)
TK4P60DB(T6RSS-Q)
Part Number:
TK4P60DB(T6RSS-Q)
Producent:
Toshiba Semiconductor and Storage
Opis:
MOSFET N-CH 600V 3.7A DPAK-3
Stan ołowiu / status RoHS:
Bezołowiowa / zgodna z RoHS
Dostępna Ilość:
5602 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
TK4P60DB(T6RSS-Q).pdf
Zapytanie ofertowe

Wprowadzenie

We can supply TK4P60DB(T6RSS-Q), use the request quote form to request TK4P60DB(T6RSS-Q) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK4P60DB(T6RSS-Q).The price and lead time for TK4P60DB(T6RSS-Q) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK4P60DB(T6RSS-Q).We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
VGS (th) (Max) @ Id:4.4V @ 1mA
Vgs (maks.):±30V
Technologia:MOSFET (Metal Oxide)
Dostawca urządzeń Pakiet:D-Pak
Seria:π-MOSVII
RDS (Max) @ ID, Vgs:2 Ohm @ 1.9A, 10V
Strata mocy (max):80W (Tc)
Opakowania:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Inne nazwy:TK4P60DBT6RSSQ
temperatura robocza:150°C (TJ)
Rodzaj mocowania:Surface Mount
Poziom czułości na wilgoć (MSL):1 (Unlimited)
Status bezołowiowy / status RoHS:Lead free / RoHS Compliant
Pojemność wejściowa (Ciss) (maks.) @ Vds:540pF @ 25V
Opłata bramkowa (Qg) (maksymalna) @ Vgs:11nC @ 10V
Rodzaj FET:N-Channel
Cecha FET:-
Napięcie Napędu (Max Rds On, Min Rds On):10V
Spust do źródła napięcia (Vdss):600V
szczegółowy opis:N-Channel 600V 3.7A (Ta) 80W (Tc) Surface Mount D-Pak
Prąd - Ciągły Odpływ (Id) @ 25 ° C:3.7A (Ta)
Email:[email protected]

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