SI3586DV-T1-E3
SI3586DV-T1-E3
Delenummer:
SI3586DV-T1-E3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N/P-CH 20V 2.9A 6TSOP
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
24989 Pieces
Leveringstid:
1-2 days
Dataark:
SI3586DV-T1-E3.pdf

Introduksjon

We can supply SI3586DV-T1-E3, use the request quote form to request SI3586DV-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3586DV-T1-E3.The price and lead time for SI3586DV-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3586DV-T1-E3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:1.1V @ 250µA
Leverandør Enhetspakke:6-TSOP
Serie:TrenchFET®
Rds På (Maks) @ Id, Vgs:60 mOhm @ 3.4A, 4.5V
Strøm - Maks:830mW
emballasje:Tape & Reel (TR)
Pakke / tilfelle:SOT-23-6 Thin, TSOT-23-6
Andre navn:SI3586DV-T1-E3TR
SI3586DVT1E3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:-
Gateavgift (Qg) (Maks) @ Vgs:6nC @ 4.5V
FET Type:N and P-Channel
FET-funksjonen:Logic Level Gate
Drain til Source Voltage (VDSS):20V
Detaljert beskrivelse:Mosfet Array N and P-Channel 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:2.9A, 2.1A
Basenummer:SI3586
Email:[email protected]

Quick Request Quote

Delenummer
Mengde
Selskap
E-post
telefon
kommentarer