TK35N65W,S1F
TK35N65W,S1F
Onderdeel nummer:
TK35N65W,S1F
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET N-CH 650V 35A TO-247
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
34777 Pieces
Aflevertijd:
1-2 days
Data papier:
TK35N65W,S1F.pdf

Invoering

We can supply TK35N65W,S1F, use the request quote form to request TK35N65W,S1F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK35N65W,S1F.The price and lead time for TK35N65W,S1F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK35N65W,S1F.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:3.5V @ 2.1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-247
Serie:DTMOSIV
Rds On (Max) @ Id, VGS:80 mOhm @ 17.5A, 10V
Vermogensverlies (Max):270W (Tc)
Packaging:Tube
Verpakking / doos:TO-247-3
Andere namen:TK35N65W,S1F(S
TK35N65W,S1F-ND
TK35N65WS1F
Temperatuur:150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4100pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):650V
gedetailleerde beschrijving:N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25 ° C:35A (Ta)
Email:[email protected]

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