STH80N10F7-2
STH80N10F7-2
Onderdeel nummer:
STH80N10F7-2
Fabrikant:
STMicroelectronics
Beschrijving:
MOSFET N-CH 100V 80A H2PAK-2
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
26653 Pieces
Aflevertijd:
1-2 days
Data papier:
STH80N10F7-2.pdf

Invoering

We can supply STH80N10F7-2, use the request quote form to request STH80N10F7-2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STH80N10F7-2.The price and lead time for STH80N10F7-2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STH80N10F7-2.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:H2Pak-2
Serie:DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, VGS:9.5 mOhm @ 40A, 10V
Vermogensverlies (Max):110W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere namen:497-14980-2
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:38 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3100pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2
Current - Continuous Drain (Id) @ 25 ° C:80A (Tc)
Email:[email protected]

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