SQJB90EP-T1_GE3
SQJB90EP-T1_GE3
Onderdeel nummer:
SQJB90EP-T1_GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET 2 N-CH 80V POWERPAK SO8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
51627 Pieces
Aflevertijd:
1-2 days
Data papier:
SQJB90EP-T1_GE3.pdf

Invoering

We can supply SQJB90EP-T1_GE3, use the request quote form to request SQJB90EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJB90EP-T1_GE3.The price and lead time for SQJB90EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJB90EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:3.5V @ 250µA
Leverancier Device Pakket:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, VGS:21.5 mOhm @ 10A, 10V
Vermogen - Max:48W
Packaging:Original-Reel®
Verpakking / doos:PowerPAK® SO-8 Dual
Andere namen:SQJB90EP-T1_GE3DKR
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain naar de Bron Voltage (Vdss):80V
gedetailleerde beschrijving:Mosfet Array 2 N-Channel (Dual) 80V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Current - Continuous Drain (Id) @ 25 ° C:30A (Tc)
Email:[email protected]

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