SQJ431EP-T1_GE3
SQJ431EP-T1_GE3
Onderdeel nummer:
SQJ431EP-T1_GE3
Fabrikant:
Vishay / Siliconix
Beschrijving:
MOSFET P-CHAN 200V SO8L
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
79362 Pieces
Aflevertijd:
1-2 days
Data papier:
SQJ431EP-T1_GE3.pdf

Invoering

We can supply SQJ431EP-T1_GE3, use the request quote form to request SQJ431EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ431EP-T1_GE3.The price and lead time for SQJ431EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ431EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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Voltage - Test:4355pF @ 25V
Voltage - Breakdown:PowerPAK® SO-8
VGS (th) (Max) @ Id:213 mOhm @ 1A, 4V
Vgs (Max):6V, 10V
Technologie:MOSFET (Metal Oxide)
Serie:Automotive, AEC-Q101, TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, VGS:12A (Tc)
Polarisatie:PowerPAK® SO-8
Andere namen:SQJ431EP-T1_GE3TR
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:18 Weeks
Fabrikant Onderdeelnummer:SQJ431EP-T1_GE3
Input Capacitance (Ciss) (Max) @ Vds:160nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:3.5V @ 250µA
FET Feature:P-Channel
Uitgebreide beschrijving:P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Drain naar de Bron Voltage (Vdss):-
Beschrijving:MOSFET P-CHAN 200V SO8L
Current - Continuous Drain (Id) @ 25 ° C:200V
capacitieve Ratio:83W (Tc)
Email:[email protected]

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