SQJ422EP-T1_GE3
SQJ422EP-T1_GE3
Onderdeel nummer:
SQJ422EP-T1_GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 40V 75A PPAK SO-8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
61619 Pieces
Aflevertijd:
1-2 days
Data papier:
SQJ422EP-T1_GE3.pdf

Invoering

We can supply SQJ422EP-T1_GE3, use the request quote form to request SQJ422EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ422EP-T1_GE3.The price and lead time for SQJ422EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ422EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, VGS:3.4 mOhm @ 18A, 10V
Vermogensverlies (Max):83W (Tc)
Packaging:Original-Reel®
Verpakking / doos:PowerPAK® SO-8
Andere namen:SQJ422EP-T1_GE3DKR
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4660pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):40V
gedetailleerde beschrijving:N-Channel 40V 74A (Tc) 83W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25 ° C:74A (Tc)
Email:[email protected]

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