SISS10DN-T1-GE3
SISS10DN-T1-GE3
Onderdeel nummer:
SISS10DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 40V 60A PPAK 1212-8S
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
20957 Pieces
Aflevertijd:
1-2 days
Data papier:
SISS10DN-T1-GE3.pdf

Invoering

We can supply SISS10DN-T1-GE3, use the request quote form to request SISS10DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SISS10DN-T1-GE3.The price and lead time for SISS10DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SISS10DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):+20V, -16V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® 1212-8S (3.3x3.3)
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:2.65 mOhm @ 15A, 10V
Vermogensverlies (Max):57W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-PowerVDFN
Andere namen:SISS10DN-T1-GE3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3750pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):40V
gedetailleerde beschrijving:N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25 ° C:60A (Tc)
Email:[email protected]

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