Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.4V @ 250µA |
Vgs (Max): | +20V, -16V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® 1212-8S (3.3x3.3) |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 2.65 mOhm @ 15A, 10V |
Vermogensverlies (Max): | 57W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 8-PowerVDFN |
Andere namen: | SISS10DN-T1-GE3TR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3) |
Current - Continuous Drain (Id) @ 25 ° C: | 60A (Tc) |
Email: | [email protected] |