SIHF12N60E-GE3
SIHF12N60E-GE3
Onderdeel nummer:
SIHF12N60E-GE3
Fabrikant:
Vishay / Siliconix
Beschrijving:
MOSFET N-CH 600V 12A TO220 FULLP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
32237 Pieces
Aflevertijd:
1-2 days
Data papier:
SIHF12N60E-GE3.pdf

Invoering

We can supply SIHF12N60E-GE3, use the request quote form to request SIHF12N60E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHF12N60E-GE3.The price and lead time for SIHF12N60E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHF12N60E-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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Voltage - Test:937pF @ 100V
VGS (th) (Max) @ Id:380 mOhm @ 6A, 10V
Vgs (Max):10V
Technologie:MOSFET (Metal Oxide)
Serie:E
RoHS Status:Digi-Reel®
Rds On (Max) @ Id, VGS:12A (Tc)
Polarisatie:TO-220-3 Full Pack
Andere namen:SIHF12N60E-GE3DKR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:19 Weeks
Fabrikant Onderdeelnummer:SIHF12N60E-GE3
Input Capacitance (Ciss) (Max) @ Vds:58nC @ 10V
IGBT Type:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
FET Feature:N-Channel
Uitgebreide beschrijving:N-Channel 600V 12A (Tc) 33W (Tc) Through Hole
Drain naar de Bron Voltage (Vdss):-
Beschrijving:MOSFET N-CH 600V 12A TO220 FULLP
Current - Continuous Drain (Id) @ 25 ° C:600V
capacitieve Ratio:33W (Tc)
Email:[email protected]

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