Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4.5V @ 250µA |
Vgs (Max): | ±30V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | D-PAK (TO-252AA) |
Serie: | E |
Rds On (Max) @ Id, VGS: | 368 mOhm @ 4.5A, 10V |
Vermogensverlies (Max): | 78W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andere namen: | SIHD9N60E-GE3TR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 778pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 600V |
gedetailleerde beschrijving: | N-Channel 600V 9A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA) |
Current - Continuous Drain (Id) @ 25 ° C: | 9A (Tc) |
Email: | [email protected] |