SI8457DB-T1-E1
SI8457DB-T1-E1
Onderdeel nummer:
SI8457DB-T1-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET P-CH 12V MICROFOOT
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
7378 Pieces
Aflevertijd:
1-2 days
Data papier:
SI8457DB-T1-E1.pdf

Invoering

We can supply SI8457DB-T1-E1, use the request quote form to request SI8457DB-T1-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8457DB-T1-E1.The price and lead time for SI8457DB-T1-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8457DB-T1-E1.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:700mV @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:4-MICRO FOOT® (1.6x1.6)
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:19 mOhm @ 3A, 4.5V
Vermogensverlies (Max):1.1W (Ta), 2.7W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:4-UFBGA
Andere namen:SI8457DB-T1-E1CT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2900pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:93nC @ 8V
FET Type:P-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):1.8V, 4.5V
Drain naar de Bron Voltage (Vdss):12V
gedetailleerde beschrijving:P-Channel 12V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
Current - Continuous Drain (Id) @ 25 ° C:-
Email:[email protected]

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