Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 900mV @ 1mA |
Vgs (Max): | ±8V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® SO-8 |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 7.3 mOhm @ 20A, 4.5V |
Vermogensverlies (Max): | 1.8W (Ta) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | PowerPAK® SO-8 |
Andere namen: | SI7485DP-T1-E3CT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 5V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 1.8V, 4.5V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 12.5A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25 ° C: | 12.5A (Ta) |
Email: | [email protected] |