SI2342DS-T1-GE3
Onderdeel nummer:
SI2342DS-T1-GE3
Fabrikant:
Vishay / Siliconix
Beschrijving:
MOSFET N-CH 8V 6A SOT-23
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
29360 Pieces
Aflevertijd:
1-2 days
Data papier:
SI2342DS-T1-GE3.pdf

Invoering

We can supply SI2342DS-T1-GE3, use the request quote form to request SI2342DS-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI2342DS-T1-GE3.The price and lead time for SI2342DS-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI2342DS-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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Voltage - Test:1070pF @ 4V
Voltage - Breakdown:SOT-23
VGS (th) (Max) @ Id:17 mOhm @ 7.2A, 4.5V
Vgs (Max):1.2V, 4.5V
Technologie:MOSFET (Metal Oxide)
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, VGS:6A (Tc)
Polarisatie:TO-236-3, SC-59, SOT-23-3
Andere namen:SI2342DS-T1-GE3-ND
SI2342DS-T1-GE3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:24 Weeks
Fabrikant Onderdeelnummer:SI2342DS-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:15.8nC @ 4.5V
IGBT Type:±5V
Gate Charge (Qg) (Max) @ Vgs:800mV @ 250µA
FET Feature:N-Channel
Uitgebreide beschrijving:N-Channel 8V 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23
Drain naar de Bron Voltage (Vdss):-
Beschrijving:MOSFET N-CH 8V 6A SOT-23
Current - Continuous Drain (Id) @ 25 ° C:8V
capacitieve Ratio:1.3W (Ta), 2.5W (Tc)
Email:[email protected]

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