SI1926DL-T1-GE3
Onderdeel nummer:
SI1926DL-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET 2N-CH 60V 0.37A SOT363
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
10348 Pieces
Aflevertijd:
1-2 days
Data papier:
SI1926DL-T1-GE3.pdf

Invoering

We can supply SI1926DL-T1-GE3, use the request quote form to request SI1926DL-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1926DL-T1-GE3.The price and lead time for SI1926DL-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1926DL-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Leverancier Device Pakket:SC-70-6 (SOT-363)
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:1.4 Ohm @ 340mA, 10V
Vermogen - Max:510mW
Packaging:Tape & Reel (TR)
Verpakking / doos:6-TSSOP, SC-88, SOT-363
Andere namen:SI1926DL-T1-GE3-ND
SI1926DL-T1-GE3TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:33 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):60V
gedetailleerde beschrijving:Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6 (SOT-363)
Current - Continuous Drain (Id) @ 25 ° C:370mA
Email:[email protected]

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