Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 1V @ 250µA |
Vgs (Max): | ±8V |
Technologie: | MOSFET (Metal Oxide) |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 760 mOhm @ 400mA, 4.5V |
Vermogensverlies (Max): | 190mW (Ta) |
Packaging: | Original-Reel® |
Verpakking / doos: | SC-89, SOT-490 |
Andere namen: | SI1013CX-T1-GE3DKR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 450mA (Ta) 190mW (Ta) Surface Mount |
Current - Continuous Drain (Id) @ 25 ° C: | 450mA (Ta) |
Email: | [email protected] |