Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.5V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DFN1010D-3 |
Serie: | - |
Rds On (Max) @ Id, VGS: | 67 mOhm @ 3.2A, 10V |
Vermogensverlies (Max): | 400mW (Ta), 8.33W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 3-XDFN Exposed Pad |
Andere namen: | 1727-1478-2 1727-1478-2INACTIVE-ND 568-10949-2 568-10949-2-ND 934067148147 PMXB65ENE PMXB65ENEZ-ND |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 8 Weeks |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 295pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 3.2A (Ta) |
Email: | [email protected] |