PHD21N06LT,118
PHD21N06LT,118
Onderdeel nummer:
PHD21N06LT,118
Fabrikant:
NXP Semiconductors / Freescale
Beschrijving:
MOSFET N-CH 55V 19A DPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
32249 Pieces
Aflevertijd:
1-2 days
Data papier:
PHD21N06LT,118.pdf

Invoering

We can supply PHD21N06LT,118, use the request quote form to request PHD21N06LT,118 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PHD21N06LT,118.The price and lead time for PHD21N06LT,118 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PHD21N06LT,118.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2V @ 1mA
Vgs (Max):±15V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:DPAK
Serie:TrenchMOS™
Rds On (Max) @ Id, VGS:70 mOhm @ 10A, 10V
Vermogensverlies (Max):56W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere namen:934055349118
PHD21N06LT /T3
PHD21N06LT /T3-ND
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:9.4nC @ 5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):5V, 10V
Drain naar de Bron Voltage (Vdss):55V
gedetailleerde beschrijving:N-Channel 55V 19A (Tc) 56W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25 ° C:19A (Tc)
Email:[email protected]

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