NTD6600N-1G
NTD6600N-1G
Onderdeel nummer:
NTD6600N-1G
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 100V 12A IPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
79729 Pieces
Aflevertijd:
1-2 days
Data papier:
NTD6600N-1G.pdf

Invoering

We can supply NTD6600N-1G, use the request quote form to request NTD6600N-1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTD6600N-1G.The price and lead time for NTD6600N-1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTD6600N-1G.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:I-PAK
Serie:-
Rds On (Max) @ Id, VGS:146 mOhm @ 6A, 5V
Vermogensverlies (Max):1.28W (Ta), 56.6W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Short Leads, IPak, TO-251AA
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):5V
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:12A (Ta)
Email:[email protected]

Quick Request Quote

Onderdeel nummer
Aantal stuks
Bedrijf
E-mail
Telefoon
Comments