IXTY1R4N120PHV
Onderdeel nummer:
IXTY1R4N120PHV
Fabrikant:
IXYS Corporation
Beschrijving:
MOSFET N-CH
beschikbare kwaliteit:
23847 Pieces
Aflevertijd:
1-2 days
Data papier:
IXTY1R4N120PHV.pdf

Invoering

We can supply IXTY1R4N120PHV, use the request quote form to request IXTY1R4N120PHV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTY1R4N120PHV.The price and lead time for IXTY1R4N120PHV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTY1R4N120PHV.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:4.5V @ 100µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-252
Serie:Polar™
Rds On (Max) @ Id, VGS:13 Ohm @ 700mA, 10V
Vermogensverlies (Max):86W (Tc)
Verpakking / doos:TO-252-3, DPak (2 Leads + Tab), SC-63
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Fabrikant Standaard Levertijd:24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:666pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:24.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):1200V
gedetailleerde beschrijving:N-Channel 1200V 1.4A (Tc) 86W (Tc) Surface Mount TO-252
Current - Continuous Drain (Id) @ 25 ° C:1.4A (Tc)
Email:[email protected]

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