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Huis > producten > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTH3N200P3HV
IXTH3N200P3HV
IXTH3N200P3HV
Onderdeel nummer:
IXTH3N200P3HV
Fabrikant:
IXYS Corporation
Beschrijving:
MOSFET N-CH 2000V 3A TO-247
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
43315 Pieces
Aflevertijd:
1-2 days
Data papier:
IXTH3N200P3HV.pdf
Onderzoek

Invoering

We can supply IXTH3N200P3HV, use the request quote form to request IXTH3N200P3HV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTH3N200P3HV.The price and lead time for IXTH3N200P3HV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTH3N200P3HV.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-247
Serie:-
Rds On (Max) @ Id, VGS:8 Ohm @ 1.5A, 10V
Vermogensverlies (Max):520W (Tc)
Packaging:Tube
Verpakking / doos:TO-247-3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:24 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):2000V
gedetailleerde beschrijving:N-Channel 2000V 3A (Tc) 520W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25 ° C:3A (Tc)
Email:[email protected]

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