Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2V @ 250µA |
Vgs (Max): | ±10V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 4-DIP, Hexdip, HVMDIP |
Serie: | - |
Rds On (Max) @ Id, VGS: | 100 mOhm @ 1.5A, 5V |
Vermogensverlies (Max): | 1.3W (Ta) |
Packaging: | Tube |
Verpakking / doos: | 4-DIP (0.300", 7.62mm) |
Andere namen: | *IRLD024 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4V, 5V |
Drain naar de Bron Voltage (Vdss): | 60V |
gedetailleerde beschrijving: | N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP |
Current - Continuous Drain (Id) @ 25 ° C: | 2.5A (Ta) |
Email: | [email protected] |