Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.25V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-220AB |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 4.5 mOhm @ 40A, 10V |
Vermogensverlies (Max): | 115W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | 64-0104PBF 64-0104PBF-ND SP001550392 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 2660pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | N-Channel 30V 90A (Tc) 115W (Tc) Through Hole TO-220AB |
Current - Continuous Drain (Id) @ 25 ° C: | 90A (Tc) |
Email: | [email protected] |