Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 4V @ 150µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-262 |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 9 mOhm @ 58A, 10V |
Vermogensverlies (Max): | 230W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andere namen: | SP001557638 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 4820pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 100V |
gedetailleerde beschrijving: | N-Channel 100V 97A (Tc) 230W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25 ° C: | 97A (Tc) |
Email: | [email protected] |