Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 3.9V @ 100µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-263 (D²Pak) |
Serie: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, VGS: | 2.5 mOhm @ 100A, 10V |
Vermogensverlies (Max): | 208W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andere namen: | SP001565244 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 4730pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 6V, 10V |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | N-Channel 40V 120A (Tc) 208W (Tc) Surface Mount TO-263 (D²Pak) |
Current - Continuous Drain (Id) @ 25 ° C: | 120A (Tc) |
Email: | [email protected] |