Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.55V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DIRECTFET™ SQ |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 6.8 mOhm @ 15A, 10V |
Vermogensverlies (Max): | 2.2W (Ta), 42W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | DirectFET™ Isometric SQ |
Andere namen: | IRF6610 IRF6610-ND IRF6610TR1-ND IRF6610TR1TR SP001526776 |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 3 (168 Hours) |
Loodvrije status / RoHS-status: | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 1520pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
Current - Continuous Drain (Id) @ 25 ° C: | 15A (Ta), 66A (Tc) |
Email: | [email protected] |