Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 3V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-220AB |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 6 mOhm @ 15A, 10V |
Vermogensverlies (Max): | 3.1W (Ta), 120W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | *IRF3711PBF SP001561720 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Through Hole TO-220AB |
Current - Continuous Drain (Id) @ 25 ° C: | 110A (Tc) |
Email: | [email protected] |