GP1M010A080N
GP1M010A080N
Onderdeel nummer:
GP1M010A080N
Fabrikant:
Global Power Technologies Group
Beschrijving:
MOSFET N-CH 900V 10A TO3PN
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
61320 Pieces
Aflevertijd:
1-2 days
Data papier:
GP1M010A080N.pdf

Invoering

We can supply GP1M010A080N, use the request quote form to request GP1M010A080N pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP1M010A080N.The price and lead time for GP1M010A080N depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP1M010A080N.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-3PN
Serie:-
Rds On (Max) @ Id, VGS:1.05 Ohm @ 5A, 10V
Vermogensverlies (Max):312W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:TO-3P-3, SC-65-3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2336pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):900V
gedetailleerde beschrijving:N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25 ° C:10A (Tc)
Email:[email protected]

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