FQU13N06LTU-WS
FQU13N06LTU-WS
Onderdeel nummer:
FQU13N06LTU-WS
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 60V 11A IPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
74424 Pieces
Aflevertijd:
1-2 days
Data papier:
FQU13N06LTU-WS.pdf

Invoering

We can supply FQU13N06LTU-WS, use the request quote form to request FQU13N06LTU-WS pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQU13N06LTU-WS.The price and lead time for FQU13N06LTU-WS depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQU13N06LTU-WS.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:I-PAK
Serie:QFET®
Rds On (Max) @ Id, VGS:115 mOhm @ 5.5A, 10V
Vermogensverlies (Max):2.5W (Ta), 28W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Short Leads, IPak, TO-251AA
Andere namen:FQU13N06LTU_WS
FQU13N06LTU_WS-ND
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:4 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6.4nC @ 5V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):5V, 10V
Drain naar de Bron Voltage (Vdss):60V
gedetailleerde beschrijving:N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:11A (Tc)
Email:[email protected]

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