Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
Spanning - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
transistor Type: | PNP - Pre-Biased |
Leverancier Device Pakket: | TO-92-3 |
Serie: | - |
Weerstand - emitterbasis (R2): | 22 kOhms |
Weerstand - basis (R1): | 47 kOhms |
Vermogen - Max: | 300mW |
Packaging: | Bulk |
Verpakking / doos: | TO-226-3, TO-92-3 (TO-226AA) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Frequentie - Transition: | 200MHz |
gedetailleerde beschrijving: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Current - Collector (Ic) (Max): | 100mA |
Email: | [email protected] |