Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
Voltage - Test: | 1400pF @ 50V |
Voltage - Breakdown: | Die |
VGS (th) (Max) @ Id: | 3.2 mOhm @ 25A, 5V |
Technologie: | GaNFET (Gallium Nitride) |
Serie: | eGaN® |
RoHS Status: | Cut Tape (CT) |
Rds On (Max) @ Id, VGS: | 90A (Ta) |
Polarisatie: | Die |
Andere namen: | 917-1140-1 917-1140-1-ND 917-EPC2022ENGRCT\ |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | EPC2022ENGRT |
Input Capacitance (Ciss) (Max) @ Vds: | 13nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 12mA |
FET Feature: | N-Channel |
Uitgebreide beschrijving: | N-Channel 100V 90A (Ta) Surface Mount Die |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | TRANS GAN 100V 60A BUMPED DIE |
Current - Continuous Drain (Id) @ 25 ° C: | 100V |
capacitieve Ratio: | - |
Email: | [email protected] |