Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
Voltage - Test: | 1800pF @ 30V |
Voltage - Breakdown: | Die |
VGS (th) (Max) @ Id: | 2.2 mOhm @ 31A, 5V |
Technologie: | GaNFET (Gallium Nitride) |
Serie: | eGaN® |
RoHS Status: | Tray |
Rds On (Max) @ Id, VGS: | 60A (Ta) |
Polarisatie: | Die |
Andere namen: | 917-EPC2020ENG EPC2020ENGRB2 |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | EPC2020ENG |
Input Capacitance (Ciss) (Max) @ Vds: | 16nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 16mA |
FET Feature: | N-Channel |
Uitgebreide beschrijving: | N-Channel 60V 60A (Ta) Surface Mount Die |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | TRANS GAN 60V 60A BUMPED DIE |
Current - Continuous Drain (Id) @ 25 ° C: | 60V |
capacitieve Ratio: | - |
Email: | [email protected] |